DocumentCode
1691899
Title
Device-level voltage control scheme of MLC NAND flash memory for storage power failure recovery
Author
Sanghyuk Jung ; Yong Ho Song
Author_Institution
Hanyang Univ., Seoul, South Korea
fYear
2013
Firstpage
544
Lastpage
545
Abstract
MLC NAND flash memory has been widely used as a storage device in mobile and desktop computing systems. However, MLC NAND flash memory may cause a data loss problem because the LSB-page programmed data can be lost when a power failure occurs in the middle of a MSB-page program operation. In this paper, we propose a device-level voltage control scheme in order to overcome this problem. With the theoretical feasibility of our proposed scheme, the storage controller could fully restore the LSB-page programmed data at device-level after a power failure.
Keywords
NAND circuits; failure analysis; flash memories; integrated circuit reliability; voltage control; LSB-page programmed data; MLC NAND flash memory; MSB-page program operation; data loss problem; desktop computing systems; device-level voltage control scheme; mobile computing systems; storage controller; storage device; storage power failure recovery; Computer architecture; Flash memories; Microprocessors; Mobile communication; Parity check codes; Sensors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Consumer Electronics (ICCE), 2013 IEEE International Conference on
Conference_Location
Las Vegas, NV
ISSN
2158-3994
Print_ISBN
978-1-4673-1361-2
Type
conf
DOI
10.1109/ICCE.2013.6487012
Filename
6487012
Link To Document