DocumentCode
1691900
Title
Characterization and Optimization of InGaAs/InP Photodiodes with High Saturation Current
Author
Pan, Huapu ; Wang, Xin ; Beling, Andreas ; Chen, Hao ; Campbell, J.C.
Author_Institution
Univ. of Virginia, Charlottesville
fYear
2007
Firstpage
79
Lastpage
80
Abstract
The operation and performance of 34-mum-diameter InGaAs/InP modified charge compensated unitraveling carrier photodiodes (CC MUTCs) are studied utilizing a commercial device simulator. The device has a high responsivity of 0.75 A/W and saturation current of 100 mA. Excellent agreement has been achieved between simulations and experiments. Parameters of the photodiode are further optimized to maximize the saturation current.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; CC MUTC; III-V semiconductors; InGaAs-InP; InGaAs-InP - Interface; InGaAs/InP photodiodes; charge compensated modified unitraveling carrier photodiodes; current 100 mA; saturation current; size 34 mum; Bandwidth; Degradation; Electromagnetic heating; Indium gallium arsenide; Indium phosphide; Microwave devices; Optical fiber communication; Optical saturation; Photoconductivity; Photodiodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on
Conference_Location
Newark, DE
Print_ISBN
978-1-4244-1431-4
Type
conf
DOI
10.1109/NUSOD.2007.4349033
Filename
4349033
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