DocumentCode :
1691969
Title :
Electro-thermal instability in multi-cellular Trench-IGBTs in avalanche condition: Experiments and simulations
Author :
Riccio, M. ; Irace, A. ; Breglio, G. ; Spirito, P. ; Napoli, E. ; Mizuno, Y.
Author_Institution :
Dept. of Biomed., Electron. & Telecommun. Eng., Univ. of Naples Federico II, Naples, Italy
fYear :
2011
Firstpage :
124
Lastpage :
127
Abstract :
This paper reports on the results of a study on electro-thermal instability induced in multi-cellular Trench-IGBTs in avalanche condition. Experimental measurements, made on T-IGBTs, show possible inhomogeneous current distribution under Unclamped Inductive Switching (UIS) confirmed by transient infrared thermography measurements. Together with this, an analytical modeling of avalanche behavior has been included in a compact electro-thermal simulator to study the interaction between a large numbers of elementary cells of T-IGBTs forced in avalanche condition. Electro-thermal simulations qualitatively replicate the possible inhomogeneous operation observed experimentally. Finally a possible theoretical interpretation of the instability in avalanche condition for T-IGBT is given.
Keywords :
infrared imaging; insulated gate bipolar transistors; avalanche condition; electro-thermal instability; elementary cells; inhomogeneous current distribution; multicellular trench-IGBT; transient infrared thermography measurements; undamped inductive switching; Analytical models; Current density; Insulated gate bipolar transistors; Nonhomogeneous media; Resistance; Solid modeling; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
ISSN :
1943-653X
Print_ISBN :
978-1-4244-8425-6
Type :
conf
DOI :
10.1109/ISPSD.2011.5890806
Filename :
5890806
Link To Document :
بازگشت