Simulation of Derivative Characteristics of Broadband Quantum Dot Lasers

Author

Tan, C.L. ; Wang, Y. ; Djie, H.S. ; Ooi, B.S.

Author_Institution

Lehigh Univ., Bethlehem

fYear

2007

Firstpage

89

Lastpage

90

Abstract

We present the development of theoretical model based on multi-population rate equation to assess the derivative optical gain and chirp characteristics from the multiple states broadband InGaAs/GaAs quantum-dots laser. Our results show that the linewidth enhancement factor from the ground state is slightly larger but in the same order of magnitude as the values obtained in conventional quantum-dot lasers. This study is important in proving the competency of this novel device for diverse applications.

Keywords

III-V semiconductors; chirp modulation; gallium arsenide; ground states; indium compounds; quantum dot lasers; spectral line breadth; InGaAs-GaAs; InGaAs-GaAs - Interface; broadband quantum dot lasers; linewidth enhancement factor; multipopulation rate equation; optical chirp; optical gain; Equations; Laser feedback; Laser modes; Laser theory; Optical feedback; Optical refraction; Optical sensors; Optical variables control; Quantum dot lasers; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on

Conference_Location

Newark, DE

Print_ISBN

978-1-4244-1431-4

Type

conf

DOI

10.1109/NUSOD.2007.4349038

Filename

4349038