Advanced study of ISO VPE IR photosensitive HgCdTe/CdTe structure

Author

Vlasenko, A. ; Babentsov, V. ; Rudoy, I. ; Vlasenko, Z.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine

Volume

1

fYear

1995

Firstpage

53

Abstract

In this paper some of our results related to the study of a HgCdTe/CdTe graded structure grown by ISO VPE on CdTe and ZnCdTe substrates are presented. Particularly the initial stage of growth, defects, substrate-epilayer interaction and photoelectrical properties are given special attention. The possibility of producing two mercury enriched contact layers on the front and back sides of the photodetector is shown. The influence of the built-in charge layer of the geometrical boundary between the substrate and epilayer on the spectral distribution of the photosensitivity is discussed

Keywords

II-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; photodetectors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; HgCdTe-CdTe; HgCdTe/CdTe graded structure; IR photosensitivity; ISO VPE growth; built-in charge layer; contact layer; defects; photodetector; photoelectrical properties; spectral distribution; substrate-epilayer interaction; Charge carrier lifetime; Crystallization; Grain boundaries; ISO; Life estimation; Lighting; Mercury (metals); Surface morphology; Tellurium; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1995. Proceedings., 1995 20th International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-2786-1

Type

conf

DOI

10.1109/ICMEL.1995.500833

Filename

500833