Title :
Physical analysis of carrier lifetime controlled IGBT [II]
Author :
Tadokoro, Chihiro ; Kaneda, M. ; Takano, K. ; Kusunoki, S. ; Minato, T. ; Yahiro, J. ; Hatade, K.
Author_Institution :
Design & Technol. Dept., Fukuryo Semicon Eng. Corp., Fukuoka, Japan
Abstract :
For IGBTs, there are strong requirements for high current density usage from the cost reduction point of view and high speed operation from the system efficiency point of view. Strong carrier lifetime control is needed to reduce a turn-off loss (Eoff) of IGBT for high frequency usage. It seems to be insufficient for our previous report to deeply understand about correlation between electric characteristics and Cathode Luminescence (CL), which stands for free conduction carrier trap levels inside Si band structure. Clearer physical model is necessary to improve an agreement for both high current density and high speed operation. Therefore, we applied another analysis method of PL (Photo Luminescence) to ensure the physical model for carrier lifetime controlling method to combine relatively heavy dose of Electron Beam (EB) irradiation and high temperature thermal annealing.
Keywords :
annealing; band structure; carrier lifetime; cathodoluminescence; electron beam effects; electron traps; insulated gate bipolar transistors; photoluminescence; power bipolar transistors; Si; band structure; carrier lifetime controlled IGBT; cathode luminescence; electric characteristics; electron beam irradiation; free conduction carrier trap levels; high current density usage; high-frequency usage; high-speed operation; high-temperature thermal annealing; photoluminescence; turn-off loss; Annealing; Charge carrier lifetime; Electric variables; Insulated gate bipolar transistors; Luminescence; Radiation effects; Stress;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890809