Title :
Long-term stability and thermal cycling of thermocouple contacts to Si up to 350°C
Author :
Ernst, A. ; Rauscher, L. ; Bähr, G. ; Müller, E. ; Kaysser, W.A.
Author_Institution :
German Aerospace Center, Inst. of Mater. Res., Koln, Germany
fDate :
6/21/1905 12:00:00 AM
Abstract :
We report on the long-term stability and thermal cycling of thermocouple contacts to silicon up to 350°C. Such contacts call be used as a lead for electric signals while at the same time measuring the temperature immediately at the semiconductor surface. Contacts were fabricated using Au based solders at temperatures between 600 and 850°C in vacuum. Different types of thermocouple materials have been tested with good results for a type E thermocouple. The characterisation of the contacts comprises electrical measurements (I-V characteristics) and determination of elemental and phase composition by EDX mapping in the contact region. The long-term stability of the contacts has been investigated during heat treatment up to 400 h at 300°C. Thermal cycling tests were performed between ~200°C and 350°C, continuously measuring the contact resistance. The tests showed a good mechanical and electrical stability of the contacts. For application temperature above 350°C, metallic diffusion barriers or layer stacking together with special high temperature solders can be used to form electrically stable thermocouple contacts to Si
Keywords :
X-ray chemical analysis; contact resistance; diffusion barriers; electrical contacts; elemental semiconductors; heat treatment; high-temperature electronics; semiconductor device reliability; semiconductor-metal boundaries; silicon; thermal stability; thermocouples; -200 to 350 C; 400 hour; 600 to 850 C; Au based solders; Au-Si; EDX mapping; I-V characteristics; NiCr-CuNi-Si; contact resistance; electric signal lead; electrical measurements; electrical stability; elemental composition; heat treatment; high temperature solders; layer stacking; long-term stability; mechanical stability; metallic diffusion barriers; phase composition; semiconductor surface temperature measurement; thermal cycling; thermocouple contacts; type E thermocouple; Contacts; Electric variables measurement; Electrical resistance measurement; Gold; Lead compounds; Silicon; Temperature measurement; Testing; Thermal stability; Time measurement;
Conference_Titel :
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location :
Berlin
Print_ISBN :
0-7803-5795-7
DOI :
10.1109/HITEN.1999.827469