• DocumentCode
    1692071
  • Title

    Gain-Power Trade-Off in Low-Confinement Semiconductor Optical Amplifiers

  • Author

    Juodawlkis, Paul W. ; Plant, Jason J.

  • Author_Institution
    Massachusetts Inst. of Technol., Lexington
  • fYear
    2007
  • Firstpage
    97
  • Lastpage
    98
  • Abstract
    We report simulation and experimental results to explore the fundamental trade-off between small-signal gain (G0) and saturation output power (P0,SAT) in semiconductor optical amplifiers having very small (< 1%) optical confinement factor Gamma. We demonstrate a high-power 1.5-mum InGaAsP slab-coupled optical waveguide amplifier (SCOWA) exhibiting G0 = 22.5 dB and P0,SAT = +28.8 dBm.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor optical amplifiers; waveguide lasers; InGaAsP; InGaAsP - Interface; gain 22.5 dB; gain-power trade-off; optical confinement factor; saturation output power; semiconductor optical amplifiers; slab-coupled optical waveguide amplifier; small-signal gain; Charge carrier density; Gain; Optical amplifiers; Optical saturation; Optical waveguides; Power amplifiers; Power generation; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on
  • Conference_Location
    Newark, DE
  • Print_ISBN
    978-1-4244-1431-4
  • Type

    conf

  • DOI
    10.1109/NUSOD.2007.4349042
  • Filename
    4349042
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1692071