Title :
Problems of obtaining and some property of solid solutions (SiC) 1-x(AlN)x
Author :
Safaraliev, G.K. ; Kurbanov, M.K. ; Nurmagomedov, S.A. ; Ofitcerova, N.V. ; Hiijarat, A.A.
Author_Institution :
Daghestan State Univ.
fDate :
6/21/1905 12:00:00 AM
Abstract :
Results of heterojunctions obtaining on the basis of solid solutions (SiC)1-x(AlN)x are submitted and some physical properties are investigated
Keywords :
aluminium compounds; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; (SiC)1-x(AlN)x; SiC-AlN; Argon; Conductivity; Current density; Epitaxial layers; Etching; Heterojunctions; Silicon carbide; Solids; Temperature; Voltage;
Conference_Titel :
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location :
Berlin
Print_ISBN :
0-7803-5795-7
DOI :
10.1109/HITEN.1999.827471
