Temperature dependence of switching performance in IGBT circuits and its compact modeling

Author

Miyake, Masataka ; Ueno, Masaya ; Nakashima, Junichi ; Masuoka, Hiroki ; Feldmann, Uwe ; Mattausch, Hans Juergen ; Miura-Mattausch, Mitiko ; Ogawa, Takaoki ; Ueta, Takashi

Author_Institution

Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Hiroshima, Japan

fYear

2011

Firstpage

148

Lastpage

151

Abstract

We have developed the compact IGBT model HiSIM-IGBT, based on a complete solution for the potential distribution, which connects the surface-potential of the MOS-FET part to the bipolar part by an iterative procedure in a self-consistent way. Here we report the self-heating extension of HiSIM-IGBT, a compact model for power diode including the reverse recovery effect and the model application to accurate prediction of experimental switching characteristics.

Keywords

MOSFET; insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; HiSIM-IGBT; IGBT circuits; MOSFET; bipolar part; compact IGBT model; iterative procedure; power diode; reverse recovery effect; self-heating extension; surface potential; switching performance; temperature dependence; Insulated gate bipolar transistors; Integrated circuit modeling; MOSFET circuits; Switches; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on

Conference_Location

San Diego, CA

ISSN

1943-653X

Print_ISBN

978-1-4244-8425-6

Type

conf

DOI

10.1109/ISPSD.2011.5890812

Filename

5890812