Title :
Temperature dependence of switching performance in IGBT circuits and its compact modeling
Author :
Miyake, Masataka ; Ueno, Masaya ; Nakashima, Junichi ; Masuoka, Hiroki ; Feldmann, Uwe ; Mattausch, Hans Juergen ; Miura-Mattausch, Mitiko ; Ogawa, Takaoki ; Ueta, Takashi
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Hiroshima, Japan
Abstract :
We have developed the compact IGBT model HiSIM-IGBT, based on a complete solution for the potential distribution, which connects the surface-potential of the MOS-FET part to the bipolar part by an iterative procedure in a self-consistent way. Here we report the self-heating extension of HiSIM-IGBT, a compact model for power diode including the reverse recovery effect and the model application to accurate prediction of experimental switching characteristics.
Keywords :
MOSFET; insulated gate bipolar transistors; power semiconductor diodes; power semiconductor switches; HiSIM-IGBT; IGBT circuits; MOSFET; bipolar part; compact IGBT model; iterative procedure; power diode; reverse recovery effect; self-heating extension; surface potential; switching performance; temperature dependence; Insulated gate bipolar transistors; Integrated circuit modeling; MOSFET circuits; Switches; Temperature dependence; Temperature measurement;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890812
