DocumentCode :
1692209
Title :
Sol-gel derived lead-free piezoelectric Bi1/2Na1/2TiO3 thin film for MEMS applications
Author :
Yu, Ting ; Kwok, Kin-Wing ; Chan, Helen
Author_Institution :
Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China. Fax: 852-237629, e-mail: apyuting@polyu.edu.hk
fYear :
2006
Firstpage :
1
Lastpage :
3
Abstract :
Bi1/2Na1/2TiO3 (abreviated as BNT) is considered as a promising lead-free piezoelectric material for sensor and actuator applications. In this study, we demonstrate an improved sol-gel process using rapid thermal annealing (RTA). Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the BNT film at a low temperature of 650°C. The resulting film is dense and well crystallized in the perovskite phase. The piezoelectric properties of the sol-gel derived BNT films are characterized with the help of a laser interferometer. The BNT based film is expected to be a new and promising candidate for lead-free piezoelectric MEMS applications.
Keywords :
Atmosphere; Bismuth; Coatings; Crystallization; Environmentally friendly manufacturing techniques; Piezoelectric actuators; Piezoelectric films; Piezoelectric materials; Rapid thermal annealing; Rapid thermal processing; MEMS; lead-free; piezoelectric; sol-gel; thin film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of ferroelectrics, 2006. isaf '06. 15th ieee international symposium on the
Conference_Location :
Sunset Beach, NC, USA
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1331-7
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2006.4349274
Filename :
4349274
Link To Document :
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