DocumentCode
1692209
Title
Sol-gel derived lead-free piezoelectric Bi1/2 Na1/2 TiO3 thin film for MEMS applications
Author
Yu, Ting ; Kwok, Kin-Wing ; Chan, Helen
Author_Institution
Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China. Fax: 852-237629, e-mail: apyuting@polyu.edu.hk
fYear
2006
Firstpage
1
Lastpage
3
Abstract
Bi1/2 Na1/2 TiO3 (abreviated as BNT) is considered as a promising lead-free piezoelectric material for sensor and actuator applications. In this study, we demonstrate an improved sol-gel process using rapid thermal annealing (RTA). Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the BNT film at a low temperature of 650°C. The resulting film is dense and well crystallized in the perovskite phase. The piezoelectric properties of the sol-gel derived BNT films are characterized with the help of a laser interferometer. The BNT based film is expected to be a new and promising candidate for lead-free piezoelectric MEMS applications.
Keywords
Atmosphere; Bismuth; Coatings; Crystallization; Environmentally friendly manufacturing techniques; Piezoelectric actuators; Piezoelectric films; Piezoelectric materials; Rapid thermal annealing; Rapid thermal processing; MEMS; lead-free; piezoelectric; sol-gel; thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of ferroelectrics, 2006. isaf '06. 15th ieee international symposium on the
Conference_Location
Sunset Beach, NC, USA
ISSN
1099-4734
Print_ISBN
978-1-4244-1331-7
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2006.4349274
Filename
4349274
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