DocumentCode :
1692215
Title :
A Bulk Built-in Current Sensor for SET detection with dynamic memory cell
Author :
Simionovski, Alexandre ; Wirth, Gilson Inacio
Author_Institution :
Dept. de Eng. Eletr., Univ. Fed. do Rio Grande do Sul, Porto Alegre, Brazil
fYear :
2012
Firstpage :
1
Lastpage :
4
Abstract :
This paper introduces a Bulk Built-in Current Sensor (Bulk-BICS) circuit for detecting the transient current induced by a radioactive particle striking a CMOS integrated circuit. Previous solutions are discussed and some issues are presented. A new topology for the memory cell is introduced, along with the simulation results of extracted circuits already laid out in a 130 nm technology.
Keywords :
CMOS memory circuits; electric sensing devices; CMOS integrated circuit; SET detection; bulk built-in current sensor; bulk-BICS circuit; dynamic memory cell; radioactive particle striking; size 130 nm; Capacitance; Latches; Logic gates; MOS devices; Monitoring; Sensitivity; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (LASCAS), 2012 IEEE Third Latin American Symposium on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4673-1207-3
Type :
conf
DOI :
10.1109/LASCAS.2012.6180338
Filename :
6180338
Link To Document :
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