Modeling and analysis of temperature dependence of the concentration and mobility of charge carriers in SiC layers. Determination of the compensation ratio

Expressions for computing the carrier concentration and mobility as a function of temperature previously derived have been used for SiC layers. Groups of curves obtained for various parameters of this material illustrate the analysis presented. These curves give carrier concentration and mobility-versus-temperature data, and liquid-nitrogen carrier mobility versus compensation ratio data, for n- and p-type layers. A practical method of determination of the degree of compensation is proposed from Hall effect measurements at 300 K and 77 K. To verify these calculations, examples of determination of SiC layer parameters are shown, as well as a fitting of experimental mobility curves over the entire temperature range 30 K-450 K