Title :
0.25μm, 20V high performance complementary bipolar transistor with dual EPI and oxide-filled deep trench isolation for high frequency DC-DC converters
Author :
Kwon, T. ; Haynie, S. ; Sadovnikov, A. ; Allard, P. ; Strout, J. ; Strachan, A.
Author_Institution :
Adv. Process Technol. Dev. Group, Nat. Semicond., Portland, ME, USA
Abstract :
Power supply designers must increase the switching frequency of converters to meet industry demands for small sizes. In order to handle high switching frequency, a closed-loop DC-DC converter needs a high-speed error amplifier with low Rdson.Qg LDMOS power switches. In this paper, 0.25um, 20V high performance complementary bipolar transistors were developed for the high-speed error amplifier design. Dual epi was used to suppress parasitic bipolar behavior that leads to a latch-up. Also, an oxide-filled deep trench isolation was used to minimize parasitic capacitance. As a result, robust 5GHz NPN and 3GHz PNP transistors were integrated with a low Rdson.Qg LDMOS.
Keywords :
DC-DC power convertors; isolation technology; microwave bipolar transistors; switching convertors; LDMOS power switches; NPN transistors; PNP transistors; closed-loop DC-DC converter; complementary bipolar transistor; dual EPI; frequency 3 GHz; frequency 5 GHz; high frequency DC-DC converters; high-speed error amplifier; latch-up; oxide-filled deep trench isolation; parasitic bipolar behavior; parasitic capacitance; power supply designers; size 0.25 mum; switching frequency; voltage 20 V; Bipolar transistors; Doping; Implants; Parasitic capacitance; Substrates; Switching frequency; Transistors;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890818
