Relaxor Ferroelectric 0.2PZN-0.8PZT(53/47) Thick Films Fabricated Using a MOD Process

Crack free peroviskite 0.2PZN-0.8PZT (53/47)) thick films up to 6.8 ¿m were prepared by a metallic-organic decomposition (MOD) process on platinum coated titanium (Pt/Ti) foil substrates by a dipping coating technique. The thick film exhibits a pure perovskite phase structure with dense and uniform microstructure. The dielectric, ferroelectric and piezoelectric properties of the thick film have been examined and discussed. A perfect ferroelectric P-E loop was observed. The efficient piezoelectric coefficient d33,f of the film was estimated by a standard Berlincourt type meter. The measured d33,f value of the 0.2PZN-0.8PZT (53/47)) thick film is about 177 pC/N; it is larger than that of the PZT (53/47) thick film examined in the same condition, 98 pC/N. This 0.2PZN-0.8PZT(53/47) thick film promises a good application in the microelectronic devices.