Title :
Diffusions barrier, an important layer for high temperature bonds
Author :
Wagner, J. ; Dommann, A.
Author_Institution :
Inst. for Mikrosystemtechnol., Buchs SG, Switzerland
fDate :
6/21/1905 12:00:00 AM
Abstract :
Summary form only given. Sputtered Ta-Si-N films are investigated in view of their use as diffusion barriers. Deposition conditions and film properties such as atomic composition, crystallization temperature, surface roughness and, in particular, the amorphous structure as a function of the nitride concentration were analyzed by RBS, XRD and AFM. Their application as diffusion barriers in electromechanical microstructures and for interconnects with glass sealing are discussed
Keywords :
Rutherford backscattering; X-ray diffraction; atomic force microscopy; crystallisation; diffusion barriers; high-temperature electronics; integrated circuit interconnections; integrated circuit packaging; micromechanical devices; noncrystalline structure; seals (stoppers); silicon compounds; sputtered coatings; surface topography; tantalum compounds; AFM; RBS; TaSiN; XRD; amorphous structure; atomic composition; crystallization temperature; deposition conditions; diffusion barriers; electromechanical microstructures; film properties; glass sealing; high temperature bonds; interconnects; nitride concentration; packaging; sputtered Ta-Si-N films; surface roughness; Additives; Chemicals; Conducting materials; Crystalline materials; Electronic packaging thermal management; Electronics packaging; Glass; Sealing materials; Temperature; Thermal expansion;
Conference_Titel :
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location :
Berlin
Print_ISBN :
0-7803-5795-7
DOI :
10.1109/HITEN.1999.827489
