Diffusions barrier, an important layer for high temperature bonds

Author

Wagner, J. ; Dommann, A.

Author_Institution

Inst. for Mikrosystemtechnol., Buchs SG, Switzerland

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

181

Abstract

Summary form only given. Sputtered Ta-Si-N films are investigated in view of their use as diffusion barriers. Deposition conditions and film properties such as atomic composition, crystallization temperature, surface roughness and, in particular, the amorphous structure as a function of the nitride concentration were analyzed by RBS, XRD and AFM. Their application as diffusion barriers in electromechanical microstructures and for interconnects with glass sealing are discussed

Keywords

Rutherford backscattering; X-ray diffraction; atomic force microscopy; crystallisation; diffusion barriers; high-temperature electronics; integrated circuit interconnections; integrated circuit packaging; micromechanical devices; noncrystalline structure; seals (stoppers); silicon compounds; sputtered coatings; surface topography; tantalum compounds; AFM; RBS; TaSiN; XRD; amorphous structure; atomic composition; crystallization temperature; deposition conditions; diffusion barriers; electromechanical microstructures; film properties; glass sealing; high temperature bonds; interconnects; nitride concentration; packaging; sputtered Ta-Si-N films; surface roughness; Additives; Chemicals; Conducting materials; Crystalline materials; Electronic packaging thermal management; Electronics packaging; Glass; Sealing materials; Temperature; Thermal expansion;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics, 1999. HITEN 99. The Third European Conference on

Conference_Location

Berlin

Print_ISBN

0-7803-5795-7

Type

conf

DOI

10.1109/HITEN.1999.827489

Filename

827489