Title :
Gate oxide conductivity of polysilicon thin film transistors
Author :
Gueorguiev, V.K. ; Ivanov, Tz.E. ; Popova, L.I. ; Andreev, S.K.
Author_Institution :
Inst. of Solid State Phys., Sofia, Bulgaria
Abstract :
Conductivity investigations of thin film oxides grown on polysilicon are presented. It is shown that hydrogenation of underlined polysilicon with ion implantation of hydrogen through gate oxide layers essentially influence the oxides conductivity. In comparison with nonimplanted oxides, a few volts higher gate voltages for increased current injection and for higher Fowler-Nordheim effective tunneling barriers are obtained
Keywords :
electrical conductivity; ion implantation; silicon; thin film transistors; tunnelling; Fowler-Nordheim tunneling barrier; Si:H-SiO2; current injection; gate oxide conductivity; hydrogenation; ion implantation; polysilicon thin film transistor; Annealing; Boron; Conductivity; Grain boundaries; Hydrogen; Ion implantation; Silicon; Thin film transistors; Tunneling; Voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500854