DocumentCode
1692539
Title
The vertical voltage termination technique — Characterizations of single die multiple 600V power devices
Author
Vladimirova, Kremena ; Crebier, Jean-Christophe ; Schaeffer, Christian ; Constantin, Delphine
Author_Institution
Grenoble Electr. Eng. Lab. (G2Elab), St. Martin d´´Hères, France
fYear
2011
Firstpage
204
Lastpage
207
Abstract
Deep trench terminations are commonly known as a technique to achieve ideal breakdown voltages for high voltage devices. This paper presents the use of deep trench terminations as an original concept to integrate multiple vertical power devices on a common die. The concept is based on the creation of vertical deep trench terminations on the periphery of the devices, thus allowing to separate the drift regions and to completely insulate the multiple power devices sharing the same backside contact electrode. Power diodes in the range of 600V are fabricated and experimentally tested to validate the concept. The prototypes demonstrated excellent forward and reverse biased static characteristics.
Keywords
electric breakdown; power semiconductor diodes; backside contact electrode; breakdown voltages; deep trench terminations; high voltage devices; power diodes; single die multiple power devices; vertical voltage termination technique; voltage 600 V; Leakage current; Metals; Probes; Silicon; Temperature; Temperature measurement; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location
San Diego, CA
ISSN
1943-653X
Print_ISBN
978-1-4244-8425-6
Type
conf
DOI
10.1109/ISPSD.2011.5890826
Filename
5890826
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