• DocumentCode
    1692539
  • Title

    The vertical voltage termination technique — Characterizations of single die multiple 600V power devices

  • Author

    Vladimirova, Kremena ; Crebier, Jean-Christophe ; Schaeffer, Christian ; Constantin, Delphine

  • Author_Institution
    Grenoble Electr. Eng. Lab. (G2Elab), St. Martin d´´Hères, France
  • fYear
    2011
  • Firstpage
    204
  • Lastpage
    207
  • Abstract
    Deep trench terminations are commonly known as a technique to achieve ideal breakdown voltages for high voltage devices. This paper presents the use of deep trench terminations as an original concept to integrate multiple vertical power devices on a common die. The concept is based on the creation of vertical deep trench terminations on the periphery of the devices, thus allowing to separate the drift regions and to completely insulate the multiple power devices sharing the same backside contact electrode. Power diodes in the range of 600V are fabricated and experimentally tested to validate the concept. The prototypes demonstrated excellent forward and reverse biased static characteristics.
  • Keywords
    electric breakdown; power semiconductor diodes; backside contact electrode; breakdown voltages; deep trench terminations; high voltage devices; power diodes; single die multiple power devices; vertical voltage termination technique; voltage 600 V; Leakage current; Metals; Probes; Silicon; Temperature; Temperature measurement; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
  • Conference_Location
    San Diego, CA
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-8425-6
  • Type

    conf

  • DOI
    10.1109/ISPSD.2011.5890826
  • Filename
    5890826