High Vgs MOSFET characteristics with thin gate oxide for PMIC application

We present the characteristics of a newly developed MOSFET which has thin gate oxide but sustains high gate voltage. It consists of MIM capacitor coupled floating gate poly and source/drain junction formed by low voltage well. The characteristics of the MOSFET depend on the choice of capacitance coupling ratio which is determined by the ratio of MIM (Metal-Insulator-Metal) capacitance and gate oxide capacitance. This means that the proper choice of layout can control the device performances; threshold voltage, I_D-V_D, and I_D-V_G characteristics. Some of smart power management ICs requires of a low density non-volatile memory for the purpose of PMIC trimming. To meet this purpose, NVM embedding on PMIC solution should be cost effective. This newly proposed high gate voltage MOSFET with thin gate oxide can be an effective solution for the periphery circuits of single poly EEPROM operation.