DocumentCode
1692605
Title
MOSFET prediction in space environments
Author
Shvetzov-Shilovsky, I.N.
Author_Institution
Dept. of Microelectron., Moscow Eng. Phys. Inst., Russia
Volume
1
fYear
1995
Firstpage
183
Abstract
This paper describes the approach to the prediction of MOSFET response in space environments based on mathematical modeling. The parameters of the models are extracted from characteristics, obtained in laboratory tests, when transistors are irradiated at relatively high dose rates and then annealed. The results can be extrapolated to the range of dose rates, typical for space applications
Keywords
MOSFET; X-ray effects; semiconductor device models; space vehicle electronics; MOSFET prediction; MOSFET response; anneal; high dose rates; irradiated devices; mathematical modeling; space environments; Circuit simulation; Circuit synthesis; Circuit testing; Electron traps; MOSFET circuits; Mathematical model; Predictive models; Simulated annealing; Space technology; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-2786-1
Type
conf
DOI
10.1109/ICMEL.1995.500862
Filename
500862
Link To Document