Title :
Embedded FeRAM Challenges in the 65-nm Technology Node and Beyond
Author :
Kato, Yoshihisa ; Tanaka, Hiroyuki ; Isogai, Kazunori ; Kaibara, Kazuhiro ; Kaneko, Yukihiro ; Shimada, Yasuhiro ; Brubaker, Matt ; Celinska, Jolanta ; McMillan, Larry D. ; de Araujo, Carlos A. Paz
Author_Institution :
Matsushita Electric Industrial Co., Ltd., Semiconductor Res. Ctr., Takatsuki, Osaka, Japan. Fax: +81-72-682-7923 E-mail: kato.yoshihisa@jp.panasonic.com
Abstract :
To embedded ferroelectric random access memories in the 65-nm CMOS and beyond, three-dimensional structure and low-temperature formation have been developed.
Keywords :
CMOS process; CMOS technology; Capacitors; Chemical technology; Crystallization; Ferroelectric films; Ferroelectric materials; MOCVD; Nonvolatile memory; Random access memory; Bi4Ti3O12; FeRAM; MOCVD; SrBi2Ta2O9;
Conference_Titel :
Applications of ferroelectrics, 2006. isaf '06. 15th ieee international symposium on the
Conference_Location :
Sunset Beach, NC, USA
Print_ISBN :
978-1-4244-1331-7
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2006.4349291
