Border trap characterisation by measurements of current-voltage characteristics of MOS capacitors

Author

Dimitrijev, Sima ; Tanner, Philip ; Yao, Z. Qiang ; Harrison, H.Barry

Author_Institution

Sch. of Microelectron. Eng., Griffith Univ., Brisbane, Qld., Australia

Volume

1

fYear

1995

Firstpage

215

Abstract

Slow current transients in metal-oxide-semiconductor (MOS) capacitors have been observed and related to border traps (traps that are too slow to be classified as interface traps, and too fast to be classified as oxide traps). This paper describes border-trap related current transients induced by voltage stepping as a possible technique for both energy-level and time-response characterisation of the border traps. The voltage stepping measurements are compared to the standard linear voltage ramping technique

Keywords

MOS capacitors; characteristics measurement; electron traps; electronic density of states; MOS capacitors; border trap characterisation; current-voltage characteristics; energy-level characterisation; linear voltage ramping technique; slow current transients; time-response characterisation; voltage stepping; Australia; Current measurement; Current-voltage characteristics; Delay effects; Dielectric substrates; MOS capacitors; Microelectronics; Silicon; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1995. Proceedings., 1995 20th International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-2786-1

Type

conf

DOI

10.1109/ICMEL.1995.500867

Filename

500867