Title :
Safe operating area of AlGaAs/InGaAs/GaAs HEMT power transistors
Author :
Pala, Vipindas ; Hella, Mona ; Chow, T. Paul
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A study of the physical phenomena leading to second breakdown of AlGaAs/InGaAs/GaAs power HEMTs in high voltage and high current conditions is presented. The boundary of the safe operating area (SOA) is measured in both DC and pulsed conditions. The effect of gate de-biasing and triggering of the parasitic bipolar transistor are identified as reasons for deterioration of the SOA. A model for these effects is also presented.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; power HEMT; power transistors; AlGaAs-InGaAs-GaAs; HEMT power transistors; gate de-biasing; gate triggering; parasitic bipolar transistor; pulsed conditions; safe operating area; second breakdown; Electric breakdown; Impact ionization; Logic gates; PHEMTs; Semiconductor optical amplifiers;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890836
