Title :
Reliability study of Au-In transient liquid phase bonding for SiC power semiconductor packaging
Author :
Grummel, Brian ; Mustain, Habib A. ; Shen, Z. John ; Hefner, Allen R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
Transient liquid phase (TLP) bonding is a promising advanced die-attach technique for wide-bandgap power semiconductor and high-temperature packaging. TLP bonding advances modern soldering techniques by raising the melting point to over 500°C without detrimental high-lead materials. The bond also has greater reliability and rigidity due in part to a bonding temperature of 200°C that drastically lowers the peak bond stresses. Furthermore, the thermal conductivity is fractionally increased 67% while the bond thickness is substantially reduced, lowering the thermal resistance by an order of magnitude or more. It is observed that Au-In TLP bonds exude excellent electrical reliability against thermal cycling degradation if designed properly as experimentally confirmed in this work.
Keywords :
bonding processes; high-temperature techniques; lead; microassembling; power semiconductor devices; semiconductor device packaging; semiconductor device reliability; silicon compounds; soldering; thermal conductivity; thermal resistance; wide band gap semiconductors; Au-In; Pb; SiC; die-attach technique; electrical reliability; high-temperature packaging; power semiconductor packaging; soldering techniques; temperature 200 C; thermal conductivity; thermal cycling degradation; thermal resistance; transient liquid phase bonding; wide-bandgap power semiconductor; Bonding; Conductivity; Gold; Reliability; Silicon carbide; Substrates;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890840
