Title :
Utilization analysis of trim-enabled NAND flash memory
Author :
Boncheol Gu ; Jupyung Lee ; Jung, B.M. ; Jungmin Seo ; Hyun-Jung Shin
Author_Institution :
Samsung Adv. Inst. of Technol., Yongin, South Korea
Abstract :
In this paper, we present a novel probabilistic model of the utilization for trim-enabled NAND flash memory devices. This model provides a simple and powerful method to reason about the performance of NAND flash memory, given its capacity and the frequency of write operations.
Keywords :
NAND circuits; flash memories; probability; probabilistic model; trim-enabled NAND flash memory device utilization analysis; Analytical models; Conferences; Consumer electronics; File systems; Flash memories; Performance evaluation; Steady-state;
Conference_Titel :
Consumer Electronics (ICCE), 2013 IEEE International Conference on
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4673-1361-2
DOI :
10.1109/ICCE.2013.6487053
