Title :
Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor
Author :
Furukawa, A. ; Kinouchi, S. ; Nakatake, H. ; Ebiike, Y. ; Kagawa, Y. ; Miura, N. ; Nakao, Y. ; Imaizumi, M. ; Sumitani, H. ; Oomori, T.
Author_Institution :
Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amagasaki, Japan
Abstract :
4H-SiC MOSFETs integrated with a current sensor have been fabricated for the first time. The MOSFET shows superior characteristics with a specific on-resistance of 3.7 mΩcm2 and a blocking voltage of 1.4 kV. The deviation of the current ratio (Imain/Isense) stays within 10% in the temperature range between 25°C and 175°C, which is desirable for the current sensor of high power devices. Furthermore, the main current shut-off operation at an over-current detected using the current sensor has been demonstrated successfully.
Keywords :
electric resistance; power MOSFET; MOSFET; SiC:H; current sensor; high power device; on-resistance; shut-off operation; temperature 25 C to 175 C; voltage 1.2 kV; voltage 1.4 kV; Logic gates; MOSFETs; Resistors; Silicon carbide; Temperature; Temperature sensors;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890847
