Modelling of resolution enhancement processes in lithography

Author

Arshak, K.I. ; McDonagh, D. ; Arshak, A. ; Mathur, B.P.

Author_Institution

Dept. of Electron. & Comput. Eng., Limerick Univ., Ireland

Volume

1

fYear

1995

Firstpage

309

Abstract

This paper describes the modelling and simulation of two resolution enhancement techniques in lithography: 1) phase shift mask (PSM) technology and 2) top surface imaging (TSI) with silylation and dry development. The effect of the duty ratio on the image contrast is computed. Simulated one and two dimensional rim shifters and attenuated PSMs are presented. The effect of the aerial image on the silylation profile for the top imaging processes, DESIRE and PRIME, is also presented. The effect of the first etch step on the final resist profiles is examined. The partial pressure and the presence of magnetic fields are also considered

Keywords

lithography; phase shifting masks; semiconductor process modelling; DESIRE; PRIME; aerial image; attenuated PSM; dry development; duty ratio; first etch step; image contrast; lithography; magnetic fields; modelling; partial pressure; phase shift mask technology; resist profiles; resolution enhancement processes; silylation; silylation profile; simulation; top imaging processes; top surface imaging; two dimensional rim shifters; Computational modeling; Dry etching; Electron optics; Image resolution; Lithography; Magnetic fields; Optical attenuators; Optical devices; Optical imaging; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1995. Proceedings., 1995 20th International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-2786-1

Type

conf

DOI

10.1109/ICMEL.1995.500886

Filename

500886