DocumentCode :
1693199
Title :
Vertical charge imbalance effect on 600 V-class trench-filling superjunction power MOSFETs
Author :
Tamaki, T. ; Nakazawa, Y. ; Kanai, H. ; Abiko, Y. ; Ikegami, Y. ; Ishikawa, M. ; Wakimoto, E. ; Yasuda, T. ; Eguchi, S.
Author_Institution :
Renesas Electron. Corp., Takasaki, Japan
fYear :
2011
Firstpage :
308
Lastpage :
311
Abstract :
600V-class superjunction (SJ) MOSFETs fabricated by trench-filling process are investigated by analytical and numerical solutions with experimental results. The careful consideration on the effects of trench taper and p-column profile is given for accurate charge control. The breakdown voltage (Vb), specific on-resistance (RonAa), and gate-to-drain charge (Qgd) of 736 V, 16.4 mΩ-cm2, and 6 nC, respectively, have been achieved for the fabricated SJ-MOSFET.
Keywords :
electric breakdown; power MOSFET; breakdown voltage; charge control; p-column profile; superjunction power MOSFET; trench filling process; trench taper; vertical charge imbalance effect; voltage 600 V; voltage 736 V; Analytical models; Doping profiles; Electric fields; Epitaxial growth; Junctions; MOSFETs; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
ISSN :
1943-653X
Print_ISBN :
978-1-4244-8425-6
Type :
conf
DOI :
10.1109/ISPSD.2011.5890852
Filename :
5890852
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1693199
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