DocumentCode :
1693217
Title :
Energy limits for unclamped inductive switching in high-voltage planar and SuperJunction power MOSFETs
Author :
Roig, J. ; Moens, P. ; McDonald, J. ; Vanmeerbeek, P. ; Bauwens, F. ; Tack, M.
Author_Institution :
Power Technol. Centre, ON Semicond., Oudenaarde, Belgium
fYear :
2011
Firstpage :
312
Lastpage :
315
Abstract :
In this work the maximum UIS energy capability (Eas) for High-Voltage (600V-900V) Planar and SuperJunction (SJ) power MOSFETs is analyzed through experiment, TCAD simulation and analytical modeling. A new theoretical approach considering a buried heat source is presented to accurately predict Eas values in a wide range of voltage capability and load inductor values.
Keywords :
inductors; power MOSFET; technology CAD (electronics); TCAD simulation; UIS; analytical modeling; buried heat source; high-voltage planar power MOSFET; load inductor; superjunction power MOSFET; unclamped inductive switching; voltage 600 V to 900 V; Analytical models; Heating; MOSFETs; Neodymium; Power measurement; Silicon; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
ISSN :
1943-653X
Print_ISBN :
978-1-4244-8425-6
Type :
conf
DOI :
10.1109/ISPSD.2011.5890853
Filename :
5890853
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1693217
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