DocumentCode
1693236
Title
Development of wafer thinning and double-sided bumping technologies for the three-dimensional stacked LSI
Author
Sunohara, Masahiro ; Fujii, Tomonori ; Hoshino, Masataka ; Yonemura, Hitoshi ; Tomisaka, Manabu ; Takahashi, Kenji
Author_Institution
Dept. Electron. Syst. Integration Technol. Res., Assoc. of Super-Adv. Electron. Technol., Tsukuba, Japan
fYear
2002
fDate
6/24/1905 12:00:00 AM
Firstpage
238
Lastpage
245
Abstract
The three-dimensional (3D) chip stacking technology has been developed extensively recently for the next generation packaging technology. The technology includes thorough electrode fabrication, wafer thinning, wafer backside processing, testing, and chip stacking. Wafer thinning and wafer backside processing are important technologies among them, because these technologies accommodate small and thin form factor, enable thin chip stacking, and enhances electrical and mechanical reliability of the stacked module. In this paper, novel technologies of wafer thinning and wafer backside processes that include insulation film formation and bumping on the backside of the thinned wafer are described.
Keywords
integrated circuit packaging; large scale integration; chip stacking; double-sided bumping technology; electrical reliability; electrode fabrication; form factor; insulation film; mechanical reliability; packaging technology; testing; three-dimensional stacked LSI; wafer backside processing; wafer thinning; Chip scale packaging; Costs; Electrodes; Electronic mail; Fabrication; Large scale integration; Scanning electron microscopy; Stacking; Testing; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 2002. Proceedings. 52nd
ISSN
0569-5503
Print_ISBN
0-7803-7430-4
Type
conf
DOI
10.1109/ECTC.2002.1008100
Filename
1008100
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