• DocumentCode
    1693236
  • Title

    Development of wafer thinning and double-sided bumping technologies for the three-dimensional stacked LSI

  • Author

    Sunohara, Masahiro ; Fujii, Tomonori ; Hoshino, Masataka ; Yonemura, Hitoshi ; Tomisaka, Manabu ; Takahashi, Kenji

  • Author_Institution
    Dept. Electron. Syst. Integration Technol. Res., Assoc. of Super-Adv. Electron. Technol., Tsukuba, Japan
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    238
  • Lastpage
    245
  • Abstract
    The three-dimensional (3D) chip stacking technology has been developed extensively recently for the next generation packaging technology. The technology includes thorough electrode fabrication, wafer thinning, wafer backside processing, testing, and chip stacking. Wafer thinning and wafer backside processing are important technologies among them, because these technologies accommodate small and thin form factor, enable thin chip stacking, and enhances electrical and mechanical reliability of the stacked module. In this paper, novel technologies of wafer thinning and wafer backside processes that include insulation film formation and bumping on the backside of the thinned wafer are described.
  • Keywords
    integrated circuit packaging; large scale integration; chip stacking; double-sided bumping technology; electrical reliability; electrode fabrication; form factor; insulation film; mechanical reliability; packaging technology; testing; three-dimensional stacked LSI; wafer backside processing; wafer thinning; Chip scale packaging; Costs; Electrodes; Electronic mail; Fabrication; Large scale integration; Scanning electron microscopy; Stacking; Testing; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2002. Proceedings. 52nd
  • ISSN
    0569-5503
  • Print_ISBN
    0-7803-7430-4
  • Type

    conf

  • DOI
    10.1109/ECTC.2002.1008100
  • Filename
    1008100