DocumentCode :
1693236
Title :
Development of wafer thinning and double-sided bumping technologies for the three-dimensional stacked LSI
Author :
Sunohara, Masahiro ; Fujii, Tomonori ; Hoshino, Masataka ; Yonemura, Hitoshi ; Tomisaka, Manabu ; Takahashi, Kenji
Author_Institution :
Dept. Electron. Syst. Integration Technol. Res., Assoc. of Super-Adv. Electron. Technol., Tsukuba, Japan
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
238
Lastpage :
245
Abstract :
The three-dimensional (3D) chip stacking technology has been developed extensively recently for the next generation packaging technology. The technology includes thorough electrode fabrication, wafer thinning, wafer backside processing, testing, and chip stacking. Wafer thinning and wafer backside processing are important technologies among them, because these technologies accommodate small and thin form factor, enable thin chip stacking, and enhances electrical and mechanical reliability of the stacked module. In this paper, novel technologies of wafer thinning and wafer backside processes that include insulation film formation and bumping on the backside of the thinned wafer are described.
Keywords :
integrated circuit packaging; large scale integration; chip stacking; double-sided bumping technology; electrical reliability; electrode fabrication; form factor; insulation film; mechanical reliability; packaging technology; testing; three-dimensional stacked LSI; wafer backside processing; wafer thinning; Chip scale packaging; Costs; Electrodes; Electronic mail; Fabrication; Large scale integration; Scanning electron microscopy; Stacking; Testing; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2002. Proceedings. 52nd
ISSN :
0569-5503
Print_ISBN :
0-7803-7430-4
Type :
conf
DOI :
10.1109/ECTC.2002.1008100
Filename :
1008100
Link To Document :
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