Title :
Computer simulation applied to physics and technology of graded band gap photodetectors
Author_Institution :
Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
Some results of computer simulation of diffusion and drift-diffusion processes in graded band gap semiconductors are presented. A few semiconductor science and technology problems were studied for the purpose of AIIBVI material characteristic and development of infrared photodetectors with predetermined or improved parameters. The main mathematical and computer model are discussed
Keywords :
II-VI semiconductors; diffusion; digital simulation; infrared detectors; semiconductor device models; AIIBVI material characteristic; computer simulation; drift-diffusion processes; graded band gap semiconductors; infrared photodetectors; mathematical model; Computational modeling; Crystallization; Crystals; Earth; Photodetectors; Photonic band gap; Physics; Semiconductor materials; Solids; Space technology;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500890
