• DocumentCode
    1693305
  • Title

    In-line ozone cleaning for plated ceramic substrates

  • Author

    Remy, Marie-Josee

  • Author_Institution
    Microelectron. Div., IBM Canada Ltd., Que., Canada
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    263
  • Lastpage
    267
  • Abstract
    Oxygen plasma ashing is commonly used to remove organic residues from surfaces, such as alumina substrates, after the plating process. An innovative cleaning method was developed in order to replace the oxygen plasma batch process by a continuous, in-line, process using ozone as the reactive gas. This paper describes the development and qualification of the ozone ashing process. Feasibility experiments and equipment design are briefly presented. Process parameters considered in the Design of Experiments and chosen methods to evaluate the efficiency of the process, along with results, are discussed. Qualification requirements as well as functional and reliability test results are also reviewed. An integrated approach was used throughout this project, taking into account possible substrate-assembly interactions while considering the need for evaluation methods representative of the actual manufacturing process. A discussion of this approach concludes the paper.
  • Keywords
    alumina; design of experiments; integrated circuit manufacture; integrated circuit testing; ozone; substrates; surface cleaning; Al2O3; O3; alumina substrates; bond assembly; design of experiments; in-line ozone cleaning; in-line process; organic stain removal; plated ceramic substrates; plating; reliability; substrate finishing; substrate plating line; Ceramics; Cleaning; Gold; Microelectronics; Plasma applications; Plasma chemistry; Plasma temperature; Substrates; Surface contamination; Surface finishing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2002. Proceedings. 52nd
  • ISSN
    0569-5503
  • Print_ISBN
    0-7803-7430-4
  • Type

    conf

  • DOI
    10.1109/ECTC.2002.1008105
  • Filename
    1008105