Title :
Power MOS devices: structures and modelling
Author :
Rossel, P. ; Tranduc, H. ; Charitat, G.
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
Abstract :
In this paper, the evolution of power MOS transistor structures is presented. Actual devices are described with their respective models. Physical numerical models are detailed together with those intended for circuit simulation
Keywords :
MIS devices; SPICE; circuit analysis computing; equivalent circuits; power MOSFET; reviews; semiconductor device models; MOS transistors; circuit simulation models; modelling; physical numerical models; power MOS devices; power MOSFET structures; Circuit simulation; Diffusion processes; Etching; MOS devices; MOSFETs; Numerical models; Plasma temperature; Semiconductor process modeling; Silicon; Voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500891
