Title :
Improved Deep Body Implant on Breakdown Voltage in Super Junction of Vertical VDMOS
Author :
Tan Chan Lik ; Strasser, Marc
Author_Institution :
Process Integration, Infineon Technol. (Kulim) Sdn. Bhd., Kulim, Malaysia
Abstract :
In this paper, we demonstrate a new technique to improve the breakdown voltage of a vertical n-channel power transistor (VDMOS) by increasing the energy of its Deep Body implant by 50%. The charge balancing of the p-body and the n-drift region can such be successfully adjusted resulting in higher blocking voltages without significant increase On resistance.
Keywords :
electric breakdown; power MOSFET; VDMOS; blocking voltages; breakdown voltage; charge balancing; deep body implant; n-drift region; p-body region; super junction; vertical n-channel power transistor; Electrical resistance measurement; Immune system; Implants; Junctions; MOSFET; Semiconductor device measurement; Voltage measurement; On Resistance; Safe Operating Area; Super-Junction; Vertical Double Diffused Metal-Oxide Semiconductor; breakdown voltage;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location :
Saratoga Springs, NY
DOI :
10.1109/ASMC.2014.6846955
