Comparison of different cell concepts for 1200 V NPT-IGBTs

IGBTs are relatively new power devices combining bipolar and unipolar properties. In this work we carried out theoretical investigations of IGBT cells with different concepts and properties using the two-dimensional device simulator ToSCA and the process simulation system DIOS. The investigations are done at three different cell types: a common planer gate cell with different p-base depths, a cell with double implanted emitter and a cell with a trench gate structure. For the realization of devices with low static losses and a high degree of ruggedness an advanced cell concept is necessary. For ruggedness modelling of the IGBTs the calculation of the short circuit current is used. It is shown, that the concept of IGBTs with double implanted emitter is a good alternative to the trench IGBT concept. An improvement of the short circuit behaviour of this device is possible in addition with lower static losses