Title :
Practical approaches to improve thermal SOA for smart power IC
Author :
Nitta, T. ; Omichi, A. ; Yanagi, S. ; Yoshihisa, Y. ; Kuroi, T. ; Hatasako, K. ; Maegawa, S. ; Furuya, K.
Author_Institution :
Renesas Electron. Corp., Itami, Japan
Abstract :
In this paper, approaches to improve thermal SOA (T-SOA) of LDMOS have been presented. We show three important points for T-SOA based on experimental data. Firstly, improvement of thermal stability, which is expressed by simple index “α”; a ratio of drain current at 200°C divided by that at 25°C. Secondly, suppression of parasitic NPN action that causes device destruction and the correlation between failure energy and off-state leak current is studied. Thirdly, reduction of the thermal impedance. We examined an effect of Cu plate on wafer surface and a thinning effect of wafer thickness, and found thinner wafers were quite effective for long pulse energy.
Keywords :
MOS integrated circuits; copper; power integrated circuits; semiconductor optical amplifiers; thermal stability; Cu; LDMOS; T-SOA; failure energy; off-state leak current; parasitic NPN action suppression; semiconductor optical amplifiers; smart power IC; temperature 200 C; temperature 25 C; thermal SOA; thermal impedance reduction; thermal stability; thinner wafers; wafer surface; wafer thickness thinning effect; Copper; Current measurement; Impedance; Indexes; Semiconductor optical amplifiers; Stability criteria; Thermal stability;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890861
