Title :
Modelling of a fully integrated light triggered thyristor with built-in self-protection
Author :
Mawby, P.A. ; Zeng, J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Wales, Swansea, UK
Abstract :
This paper presents the quasi-three dimensional modelling of a fully integrated light triggered thyristor with built-in self-protection for over-voltage and forward recovery. A two-dimensional simulator with cylindrical co-ordinates is used in the modelling. The over-voltage protection and the selective failure zone (SFZ) concept are investigated in detail. The effectiveness of the anticonductivity modulation ring is also addressed
Keywords :
overvoltage protection; photothyristors; protection; semiconductor device metallisation; semiconductor device models; SFZ concept; anticonductivity modulation ring; built-in self-protection; cylindrical co-ordinates; forward recovery protection; integrated light triggered thyristor; overvoltage protection; quasi-three dimensional modelling; selective failure zone; two-dimensional simulator; Anodes; Cathodes; Conductivity; Doping profiles; Interference; Optical devices; Protection; Resistors; Thyristors; Voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500896
