Title :
Field plate termination for Schottky structure
Author :
Badila, M. ; Brezeanu, Gh
Author_Institution :
ICCE, Bucharest Univ., Romania
Abstract :
The paper reports some results in the implementation of a new field plate termination for Schottky diodes from the technological point of view. The termination uses the slow transition of metal from silicon to oxide by the ramp oxide technique and laterally graded impurity concentration assured by weakly doped silicon or polysilicon deposited at the top of the pellets
Keywords :
Schottky diodes; doping profiles; power semiconductor diodes; semiconductor device metallisation; solid-state rectifiers; Schottky diodes; field plate termination; laterally graded impurity concentration; ramp oxide technique; weakly doped Si; weakly doped polysilicon; Epitaxial layers; Etching; Impurities; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon; Switches; Temperature; Voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500899
