Design of an 80V-class high-side capable double-resurf JI L-IGBT

This paper proposes a suitable design of an 80V-class high-side capable double-resurf lateral IGBT (L-IGBT) using our cost-effective HV-MOS process, which excludes SOI/DTI structures. This junction-isolated (JI) L-IGBT, unlike a drift-NMOSFET, suffered a large substrate leakage caused by a parasitic PNP BJT whose collector was a p-substrate. It also had a disadvantage in turn-off time due to the floated n-drift layer. We tried a unique, promising approach - the p+ collector was connected to the outmost enclosing n+ sinker internally by n-drift region resistor and externally by metallization, which needs no additional process steps. Our measurement results show that it successfully eliminated both problems without almost any sacrifice in performance of current drivability per area, breakdown voltage, HCI, and ESD endurance.