DocumentCode
1693634
Title
Physical properties of surface-barrier structure with microrelief semiconductor-metal interface
Author
Dmitruk, N.L.
Author_Institution
Inst. of Phys. of Semicond., Acad. of Sci., Kiev, Ukraine
Volume
1
fYear
1995
Firstpage
425
Abstract
The present report deals with experimental investigations of optical, electric and photoelectric properties of microrelief surfaces of III-V semiconductors and surfacer-barrier structures prepared on the basis of metal-semiconductor interfaces (Au-GaAs; Au, Ag-InP). The surface plasmon polariton excitation was shown to be an additional mechanism of the photosensitivity enhancement
Keywords
III-V semiconductors; Schottky barriers; Schottky diodes; photoconductivity; polaritons; semiconductor-metal boundaries; surface plasmons; Ag-InP; Au-GaAs; Au-InP; III-V semiconductors; electric properties; microrelief semiconductor-metal interfaces; optical properties; photoelectric properties; surface plasmon polaritons; surface-barrier structures; Anisotropic magnetoresistance; Etching; Gallium arsenide; Optical scattering; Optical surface waves; Rough surfaces; Semiconductor-metal interfaces; Surface morphology; Surface roughness; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-2786-1
Type
conf
DOI
10.1109/ICMEL.1995.500904
Filename
500904
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