Selective photodiodes with two-coordinate sensitivity (quadrants) on the basis of InGaAsP quaternary compounds

Author

Dorogan, V.V. ; Brynzari, V.I. ; Korotchenkov, G.S. ; Kosyak, V.A.

Author_Institution

Lab. of Mictroelectron., Tech. Univ. of Moldova, Moldova

Volume

1

fYear

1995

Firstpage

431

Abstract

A new structure of the selective diode-quadrant prepared on the basis of InP-InGaAsP semiconductor heterostructures is presented in this article. The diode-quadrant has a circular form and consists of five photosensitive segments: four for determination of position of incident light radiation and the fifth a protective peripheric ring. The advantages of these diodes are: the high selectivity of spectral photosensitivity (semi-width of photosensitivity spectrum:75-85 nm) and high quantum efficiency (60-65%)

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photodiodes; semiconductor heterojunctions; 60 to 65 percent; 75 to 85 nm; InP-InGaAsP; incident light radiation; photodiodes; photosensitive segments; protective peripheric ring; quantum efficiency; semiconductor heterostructures; spectral photosensitivity; two-coordinate sensitivity; Chemical elements; Electron mobility; Epitaxial layers; Impurities; Manufacturing; Microelectronics; P-i-n diodes; Photodiodes; Protection; Semiconductor diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1995. Proceedings., 1995 20th International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-2786-1

Type

conf

DOI

10.1109/ICMEL.1995.500905

Filename

500905