Title :
Selective photodiodes with two-coordinate sensitivity (quadrants) on the basis of InGaAsP quaternary compounds
Author :
Dorogan, V.V. ; Brynzari, V.I. ; Korotchenkov, G.S. ; Kosyak, V.A.
Author_Institution :
Lab. of Mictroelectron., Tech. Univ. of Moldova, Moldova
Abstract :
A new structure of the selective diode-quadrant prepared on the basis of InP-InGaAsP semiconductor heterostructures is presented in this article. The diode-quadrant has a circular form and consists of five photosensitive segments: four for determination of position of incident light radiation and the fifth a protective peripheric ring. The advantages of these diodes are: the high selectivity of spectral photosensitivity (semi-width of photosensitivity spectrum:75-85 nm) and high quantum efficiency (60-65%)
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodiodes; semiconductor heterojunctions; 60 to 65 percent; 75 to 85 nm; InP-InGaAsP; incident light radiation; photodiodes; photosensitive segments; protective peripheric ring; quantum efficiency; semiconductor heterostructures; spectral photosensitivity; two-coordinate sensitivity; Chemical elements; Electron mobility; Epitaxial layers; Impurities; Manufacturing; Microelectronics; P-i-n diodes; Photodiodes; Protection; Semiconductor diodes;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500905
