• DocumentCode
    169380
  • Title

    Ellipsometry for cSiGe metrology

  • Author

    Farhat, Soha ; Rangarajan, Sampath ; McArdle, T.J. ; Steigerwalt, Michael ; Dawei Hu ; Ming Dai

  • Author_Institution
    IBM Corp, Hopewell Junction, NY, USA
  • fYear
    2014
  • fDate
    19-21 May 2014
  • Firstpage
    42
  • Lastpage
    45
  • Abstract
    In this paper we report the effectiveness of optical ellipsometry in measuring thickness and Germanium % of channel SiGe on SOI substrate used in advanced node high performance semiconductor devices.
  • Keywords
    Ge-Si alloys; ellipsometry; semiconductor devices; silicon-on-insulator; thickness measurement; SOI substrate; SiGe; advanced node high performance semiconductor devices; optical ellipsometry; Metrology; Optical films; Optical sensors; Optical variables measurement; Semiconductor device measurement; Thickness measurement; Ellipsometry; Ge Concentration; Thickness; cSiGe; metrology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
  • Conference_Location
    Saratoga Springs, NY
  • Type

    conf

  • DOI
    10.1109/ASMC.2014.6846974
  • Filename
    6846974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=169380