Title :
Ellipsometry for cSiGe metrology
Author :
Farhat, Soha ; Rangarajan, Sampath ; McArdle, T.J. ; Steigerwalt, Michael ; Dawei Hu ; Ming Dai
Author_Institution :
IBM Corp, Hopewell Junction, NY, USA
Abstract :
In this paper we report the effectiveness of optical ellipsometry in measuring thickness and Germanium % of channel SiGe on SOI substrate used in advanced node high performance semiconductor devices.
Keywords :
Ge-Si alloys; ellipsometry; semiconductor devices; silicon-on-insulator; thickness measurement; SOI substrate; SiGe; advanced node high performance semiconductor devices; optical ellipsometry; Metrology; Optical films; Optical sensors; Optical variables measurement; Semiconductor device measurement; Thickness measurement; Ellipsometry; Ge Concentration; Thickness; cSiGe; metrology;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location :
Saratoga Springs, NY
DOI :
10.1109/ASMC.2014.6846974
