DocumentCode
1693875
Title
Dynamic high frequency phenomena in the base-emitter junction of bipolar transistors
Author
Sipilä, Markku ; Porra, Veikko ; Valtonen, M.
Author_Institution
Fac. of Electr. Eng., Helsinki Univ. of Technol., Espoo, Finland
fYear
1988
Firstpage
401
Abstract
An improved nonlinear high-frequency circuit model for the bipolar transistor is presented, based on considerations on the dynamic phenomena occurring in the normally forward biased base-emitter junction. The model incorporates higher-order circuit elements to obtain increased accuracy in circuit simulation at high frequencies. The model is derived from device physics by solving the diffusion equation in the base region by a quasistatic expansion.<>
Keywords
bipolar transistors; semiconductor device models; base region; base-emitter junction; bipolar transistors; circuit simulation; device physics; diffusion equation; dynamic phenomena; higher-order circuit elements; nonlinear high-frequency circuit model; normally forward biased; quasistatic expansion; Bipolar transistors; Circuit simulation; Differential equations; Digital circuits; Electrons; Frequency dependence; P-n junctions; Physics; Power electronics; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location
Espoo, Finland
Type
conf
DOI
10.1109/ISCAS.1988.14949
Filename
14949
Link To Document