First time right deposition of embedded SiGe in new products

Author

Van Roijen, R. ; Linskey, Meghan ; Harley, Eric ; Herbert, Alan ; Fayaz, Mohammed ; Brodfuehrer, Michael ; Mocuta, Anda ; Steigerwalt, Michael ; Snavely, Colleen

Author_Institution

Microelectron. Div., IBM, Hopewell Junction, NY, USA

fYear

2014

fDate

19-21 May 2014

Firstpage

82

Lastpage

85

Abstract

Embedded SiGe, used to boost pFET performance, is grown by selective epitaxy on silicon. Pattern density effects cause the deposited thickness to be different across different product chips under otherwise identical conditions. Since device control depends critically on thickness, we apply a pattern-density based predictive growth rate, which is used as input for the existing advanced process control method. We demonstrate that the deposited layer thickness is in acceptable range for device performance across a product chip.

Keywords

Ge-Si alloys; epitaxial growth; field effect transistors; process control; SiGe; advanced process control method; deposited layer thickness; device control; first time right deposition; pFET performance; pattern density effects; selective epitaxy; Delays; Epitaxial growth; Logic gates; Performance evaluation; Silicon; Silicon germanium; Systematics; Advanced Process Control; SiGe;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI

Conference_Location

Saratoga Springs, NY

Type

conf

DOI

10.1109/ASMC.2014.6846982

Filename

6846982