Characterization of silicon nanowire transistor as a temperature nano-sensor device

This paper represents the temperature characteristics of silicon nanowire transistor of rectangular cross-section, temperature effect on transfer characteristics, I_ON/1_oFF ratio and sub-threshuld swing was studied. OMEN nanowire simulation tool was used to investigate temperature characteristics of transistor with three types of orientations. The findings of the current study reveal that <;111> and <;100> are the best types of orientations to be used in SiNWT for the temperature application of electronic circuits, such as digital circuits and amplifiers, because of the high I_ON/1_oFF ratio and lower SS at these orientations. Moreover, the best orientation for temperature sensor was <;110> because of the larger carrier velocity and smaller channel resistance.