DocumentCode
169408
Title
Fluorine interaction On SiCN and SiOC layers detected by fault detection
Author
Raguet, Jean-Rene ; Blaya, Laurent ; Paire, Emmanuel
Author_Institution
CVD Eng., STMicroelectron., Rousset, France
fYear
2014
fDate
19-21 May 2014
Firstpage
161
Lastpage
164
Abstract
A specific issue based on fluorine interaction on SiCN and SiOC layers is presented in this paper. Beyond this issue, the main subject of this paper is to show how this issue can be detected. A fault detection program monitors the deposition process and allows to control different parameters in real time to prevent such an issue as the fluorine interaction on SiCN and SiOC layers.
Keywords
carbon compounds; chemical vapour deposition; fault diagnosis; oxygen compounds; semiconductor device reliability; semiconductor process modelling; silicon compounds; SiCN; SiCN layers; SiOC; SiOC layers; deposition process; fault detection program; fluorine interaction; Copper; Fault detection; Generators; Monitoring; Plasmas; Radio frequency; Standards; Fluorine interaction; SiCN; SiOC; fault detection;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location
Saratoga Springs, NY
Type
conf
DOI
10.1109/ASMC.2014.6846989
Filename
6846989
Link To Document