Title :
Fluorine interaction On SiCN and SiOC layers detected by fault detection
Author :
Raguet, Jean-Rene ; Blaya, Laurent ; Paire, Emmanuel
Author_Institution :
CVD Eng., STMicroelectron., Rousset, France
Abstract :
A specific issue based on fluorine interaction on SiCN and SiOC layers is presented in this paper. Beyond this issue, the main subject of this paper is to show how this issue can be detected. A fault detection program monitors the deposition process and allows to control different parameters in real time to prevent such an issue as the fluorine interaction on SiCN and SiOC layers.
Keywords :
carbon compounds; chemical vapour deposition; fault diagnosis; oxygen compounds; semiconductor device reliability; semiconductor process modelling; silicon compounds; SiCN; SiCN layers; SiOC; SiOC layers; deposition process; fault detection program; fluorine interaction; Copper; Fault detection; Generators; Monitoring; Plasmas; Radio frequency; Standards; Fluorine interaction; SiCN; SiOC; fault detection;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI
Conference_Location :
Saratoga Springs, NY
DOI :
10.1109/ASMC.2014.6846989
