Title :
2nd generation 600V SiC Schottky diodes use merged pn/Schottky structure for surge overload protection
Author :
Bjoerk, F. ; Hancock, J. ; Treu, M. ; Rupp, R. ; Reimann, T.
Author_Institution :
Infineon Technol., Villach, Austria
Abstract :
A new generation of silicon carbide Schottky diodes has been developed which address surge current overload thermal runaway and lack of avalanche clamping by the use of a merged pn/Schottky diode structure. A PN structure with low ohmic contact is used in parallel with Schottky structure to greatly extend peak current handling and also provide avalanche energy capability without compromising dynamic performance.
Keywords :
Schottky diodes; electric current; ohmic contacts; power semiconductor devices; silicon compounds; surge protection; 600 V; SiC Schottky diodes; avalanche clamping; merged pn/Schottky structure; ohmic contact; peak current handling; surge current overload thermal runaway; surge overload protection; Avalanche breakdown; Schottky diodes; Silicon carbide; Space vector pulse width modulation; Surge protection; Temperature; Testing; Thermal conductivity; Thermal resistance; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2006. APEC '06. Twenty-First Annual IEEE
Print_ISBN :
0-7803-9547-6
DOI :
10.1109/APEC.2006.1620534
