Design and optimization of high Q RF passives on SOP-based organic substrates

Integration of passive devices such as inductors and capacitors in packages or on silicon is an important step towards miniaturization and reduction of cost. These passive devices are used as stand-alone components or form an integral part of filters, oscillators, amplifiers, mixers and other RF circuits. This paper discusses the design of high Q inductors and high Q capacitors in organic substrates. Inductors with maximum quality factors in the range of 60-180 were obtained at frequencies in the 1-3 GHz band for inductances in the range of 1 nH-20 nH. This is the first demonstration of such high Q inductors in organic substrates processed using low-temperature (<200°C) processes. The dimensions of all inductors are comparable to a low temperature co-fired ceramic (LTCC, <900°C) and multichip module deposition (400°C\n\n\t\t