DocumentCode
1694322
Title
Low temperature characterization of silicon CMOS devices
Author
Ghibaudo, G. ; Balestra, F.
Author_Institution
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Volume
2
fYear
1995
Firstpage
613
Abstract
A brief review of the main physical issues about the low temperature characterization of Si CMOS devices is presented. More specifically, the carrier mobility law, the saturation velocity, the short channel effects, the impact ionization phenomenon, the hot carrier effects and the parasitic leakage current are physically analyzed
Keywords
CMOS integrated circuits; MIS devices; MOSFET; carrier mobility; cryogenic electronics; elemental semiconductors; hot carriers; impact ionisation; integrated circuit modelling; leakage currents; semiconductor device models; silicon; CMOS devices; Si; carrier mobility law; hot carrier effects; impact ionization phenomenon; low temperature characterization; parasitic leakage current; saturation velocity; short channel effects; Impact ionization; Leakage current; MOS devices; Rough surfaces; Scattering; Semiconductor device modeling; Silicon; Surface roughness; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-2786-1
Type
conf
DOI
10.1109/ICMEL.1995.500938
Filename
500938
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