Title :
Low temperature characterization of silicon CMOS devices
Author :
Ghibaudo, G. ; Balestra, F.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
A brief review of the main physical issues about the low temperature characterization of Si CMOS devices is presented. More specifically, the carrier mobility law, the saturation velocity, the short channel effects, the impact ionization phenomenon, the hot carrier effects and the parasitic leakage current are physically analyzed
Keywords :
CMOS integrated circuits; MIS devices; MOSFET; carrier mobility; cryogenic electronics; elemental semiconductors; hot carriers; impact ionisation; integrated circuit modelling; leakage currents; semiconductor device models; silicon; CMOS devices; Si; carrier mobility law; hot carrier effects; impact ionization phenomenon; low temperature characterization; parasitic leakage current; saturation velocity; short channel effects; Impact ionization; Leakage current; MOS devices; Rough surfaces; Scattering; Semiconductor device modeling; Silicon; Surface roughness; Temperature; Thermal conductivity;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500938
