Microscopic theory of electronic noise in semiconductor materials and devices

We present a microscopic analysis of electronic noise in semiconductor unipolar structures. To this end we use a Monte Carlo simulator of the carrier motion self-consistently coupled with a Poisson solver. Calculations are applied to structures with increasing degree of complexity, that is: homogeneous materials, resistors, n⁺nn ⁺ diodes, Schottky-barrier diodes and GaAs MESFETs. The main sources of noise like diffusion, generation-recombination, coupling between velocity and local electric-field fluctuations, etc., are treated in the presence of electric fields of arbitrary strength